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preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. july 2011 doc id 019059 rev 1 1/11 11 STP110N55F6 n-channel 55 v, 4.3 m ? , 110 a to-220 stripfet? vi deepgate? power mosfet features low gate charge very low on-resistance high avalanche ruggedness applications switching applications description this device is an n-channel power mosfet developed using the 6th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. figure 1. internal schematic diagram order code v dss r ds(on) max i d STP110N55F6 55 v < 5.2 m ? 110 a to-220 1 2 3 !-v $ ' 3 table 1. device summary order code marking package packaging STP110N55F6 110n55f6 to-220 tube www.st.com
contents STP110N55F6 2/11 doc id 019059 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
STP110N55F6 electrical ratings doc id 019059 rev 1 3/11 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 55 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 110 a i d drain current (continuous) at t c = 100 c 78.5 a i dm (1) 1. current limited by package. drain current (pulsed) 440 a p tot total dissipation at t c = 25 c 150 w derating factor 1 w/c t stg storage temperature - 55 to 175 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1 c/w r thj-a thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics STP110N55F6 4/11 doc id 019059 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 250 a 55 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1 a v ds = max rating,t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 60 a 4.3 5.2 m ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 8350 pf c oss output capacitance - 460 - pf c rss reverse transfer capacitance 344 pf q g total gate charge v dd = 44 v, i d = 110 a, v gs = 10 v (see figure 3) 120 nc q gs gate-source charge - tbd - nc q gd gate-drain charge tbd nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 44 v, i d = 55 a r g =4.7 ? v gs = 10 v (see figure 2) - tbd tbd - ns ns t d(off) t f turn-off-delay time fall time - tbd tbd - ns ns
STP110N55F6 electrical characteristics doc id 019059 rev 1 5/11 table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd source-drain current - 110 a i sdm (1) 1. current limited by package. source-drain current (pulsed) - 440 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 110 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 110 a, v dd = 44 v di/dt = 100 a/s, t j = 150 c (see figure 4) - tbd tbd tbd ns nc a
test circuits STP110N55F6 6/11 doc id 019059 rev 1 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive wavefor m figure 7. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STP110N55F6 package mechanical data doc id 019059 rev 1 7/11 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STP110N55F6 8/11 doc id 019059 rev 1 table 8. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
STP110N55F6 package mechanical data doc id 019059 rev 1 9/11 figure 8. to-220 type a drawing 00159 88 _typea_rev_ s
revision history STP110N55F6 10/11 doc id 019059 rev 1 5 revision history table 9. document revision history date revision changes 18-jul-2011 1 first release.
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